Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg

Man Chang; Minseok Jo; Seungjae Jung; Joonmyoung Lee; Sanghun Jeon; Hyunsang Hwang
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262107
Academic Journal
The transient charge trapping and detrapping of a thick SiO2/Al2O3 gate oxide device has been evaluated by single pulse Id-Vg (PIV). During the period of a single pulse, we observed fast electron detrapping. This occurred through the gate electrode, causing a counterclockwise PIV hysteresis despite electron injections from the channel region. The hysteresis direction transitioned from counterclockwise to clockwise as a function of pulse base level and peak level. The trap energy level of Al2O3, extracted by PIV at various temperatures, was found to be in the range of 1.14–1.39 eV, indicating the Frenkel–Poole defect band.


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