TITLE

Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates

AUTHOR(S)
Selçuk, E.; Silov, A. Yu.; Nötzel, R.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p263108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InGaAs/GaAs superlattice templates on GaAs (311)B by molecular beam epitaxy is achieved through optimization of growth temperature, InAs amount, and annealing. Directed self-organization of these QD arrays is accomplished by coarse substrate patterns providing absolute QD position control over large areas. Due to the absence of one-to-one pattern definition the site-controlled QD arrays exhibit excellent optical properties revealed by resolution limited (80 μeV) linewidth of the low-temperature photoluminescence from individual QDs.
ACCESSION #
42961925

 

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