Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

Kazazis, D.; Jannaty, P.; Zaslavsky, A.; Le Royer, C.; Tabone, C.; Clavelier, L.; Cristoloveanu, S.
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p263508
Academic Journal
We report on the fabrication and electrical characterization at room and low temperatures of a tunneling field-effect transistor (TFET). The devices are fabricated in thin germanium-on-insulator and consist of a heavily p+-doped, epitaxially grown source, a heavily n+-doped ion implanted drain, and a standard high-κ (HfO2) gate stack with an effective gate length Leff of 60 nm, obtained by trimming. The TFETs are fabricated using an ultralarge-scale integration compatible process flow. The devices exhibit an ambipolar behavior, reasonable on/off current ratio, and improved on current compared to silicon-on-insulator TFETs.


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