TITLE

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

AUTHOR(S)
Abermann, S.; Bethge, O.; Henkel, C.; Bertagnolli, E.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate ultrathin ZrO2/La2O3 high-k dielectric stacks on germanium grown by atomic layer deposition. La2O3 is deposited from tris(N,N′-diisopropylformamidinate)-lanthanum and oxygen. Interfacial layer-free oxide stacks with a relative dielectric constant of 21 and equivalent oxide thickness values as low as 0.5 nm are obtained. Metal oxide semiconductor capacitors with platinum as the gate electrode exhibit well-behaved capacitance-voltage characteristics, gate leakage current densities in the range of 0.01–1 A/cm2, and interface trap densities in the range of ∼3×1012 eV-1 cm-2.
ACCESSION #
42961912

 

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