Fabrication and characterization of 100-nm-thick GaAs cantilevers

Harris, J.G.E.; Awschalom, D.D.; Maranowski, K.D.; Gossard, A.C.
October 1996
Review of Scientific Instruments;Oct96, Vol. 67 Issue 10, p3591
Academic Journal
Describes a process for making submicron, micromechanical cantilevers out of gallium arsenic epilayers grown by molecular beam epitaxy. Characterizations of the cantilevers' resonant frequencies, quality factors and spring constants; Opportunities for integration with electronics for strain-sensitive force detection.


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