Hydrogen-radical-assisted radio-frequency plasma-enhanced chemical vapor deposition system for

Hiramatsu, Mineo; Inayoshi, Muneto; Yamada, Koji; Mizuno, Etsuko; Nawata, Masahito; Ikeda, Masanobu; Hori, Masaru; Goto, Toshio
June 1996
Review of Scientific Instruments;Jun96, Vol. 67 Issue 6, p2360
Academic Journal
Reports on the successful synthesis of diamond using an improved radio-frequency plasma-enhanced chemical vapor deposition system. Use of carbon dioxide laser irradiation to carry out substrate heating; Method for growing diamond films at a low substrate temperature of 450 degrees Celsius.


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