Cleanroom compatible anodization cell for 150 mm Si wafers

Bardwell, Jennifer A.; LeBrun, Les; Evans, R. James; Curry, Donald G.
June 1996
Review of Scientific Instruments;Jun96, Vol. 67 Issue 6, p2346
Academic Journal
Reports on the construction and testing of a cleanroom compatible anodization cell for use in silicon wafers. Material of construction; Elimination of the possibility for metallic contamination; Use of platinum electrodes immersed in the back contact and front contact solutions as primary electrical connection sites.


Related Articles

  • High-accuracy oxygen polarograph for photosynthetic systems. Meunier, P. C.; Popovic, R. // Review of Scientific Instruments;Mar88, Vol. 59 Issue 3, p486 

    A new system is presented here, whose design is based on the electrochemical phenomena occurring on the platinum electrode that we examined before [P. Meunier and R. Popovic (unpublished)]. The architecture of the system is articulated around an IBM-PC computer which controls the polarization of...

  • Efficient Three-Component One-Pot Synthesis of 4H-Pyrans. Malviya, J.; Kala, S.; Sharma, L. K.; Singh, R. K. P. // Russian Journal of Organic Chemistry;May2019, Vol. 55 Issue 5, p686 

    Clean, practical, and efficient electrochemical synthesis of pharmaceutically relevant 4H-pyran derivatives by one-pot three-component combination of an aryl aldehyde, malononitrile, and a dicarbonyl compoundis developed. The synthesis is performed in ethanol with lithium perchlorate as a...

  • Ti6Al4V foams having nanotubular surfaces for orthopaedic applications. İzmir, Merve; Tufan, Yiğithan; Tan, Güher; Ercan, Batur // Surface & Interface Analysis: SIA;Sep2019, Vol. 51 Issue 9, p954 

    Despite the widespread use of Ti6Al4V in orthopaedics, the bioinert nature of this alloy limits its biological fixation with the bone tissue. To enhance its bone fixation, two different types of Ti6Al4V foams were fabricated, and their surfaces were modified zto possess nanofeatures. To prepare...

  • Observation of the trend of interface formation in anodic native oxide on InSb by marker experiments. Shapira, Yoram; Bregman, J.; Calahorra, Z. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p48 

    We have investigated the trend of anodization of InSb by predeposition of a very thin Cr layer, acting as a marker. Results of Auger electron spectroscopy show that the oxidation process is carried out by oxygen in diffusion through the oxide film. The details and implications of this...

  • Anodized insulation for CICC coils. Zeller, A. F. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p255 

    Anodization techniques for production of CICC for radiation resistant magnets are described. Aluminum conduit can be anodized on the inside to provide electrical isolation while leaving the outside of the conductor available for structural use. This technique should work well for NbTi conductor,...

  • ALUMINUM ANODIZING CLINIC. Chesterfield, Larry // Products Finishing;Nov2009, Vol. 74 Issue 2, p32 

    The article provides an answer to a question of the process considerations that need to be taken account in the preparation and anodizing to reduce smutting

  • Correlation of optical and structural properties of light emitting porous silicon. Lee, H.-J.; Seo, Y.H.; Oh, D.-H.; Nahm, K.S.; Suh, E.-K.; Lee, Y.H.; Lee, H.J.; Hwang, Y.G.; Park, K.-H.; Chang, S.H.; Lee, E.H. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p855 

    Analyzes the correlation of optical and structural properties of light emitting porous silicon. Preparation of samples by silicon substrate anodization; Dependence of photoluminescence and Raman spectra; Transition of the porous silicon to a mixture of polycrystalline and hydrogenated amorphous...

  • Silica waveguides fabricated by oxidization of selectively anodized porous silicon. Nagata, Seiichi; Matsushita, Shinobu; Saito, Kazuya; Ohshita, Yoshio; Maeda, Yoshinobu; Yamaguchi, Masafumi; Ikushima, Akira J. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2559 

    To keep the current density at the porous silicon (PS) and Si interface constant, independent of anodization depth, a pulse anodization method has been developed. In this method, a pulse current is controlled to be proportional to the PS/Si interface area. This method was applied to produce...

  • Observation of crossing pores in anodically etched n-GaAs. Langa, S.; Carstensen, J.; Christophersen, M.; Fo¨ll, H.; Tiginyanu, I. M. // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1074 

    Pores in GaAs in the micrometer range and oriented in <111> directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III-V...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics