Porous silicon fabrication technique for large area devices

Grigoras, K.; Pacebutas, V.
June 1996
Review of Scientific Instruments;Jun96, Vol. 67 Issue 6, p2337
Academic Journal
Proposes an improved technique applied for fabrication of porous silicon layers on silicon wafers. Main principle in the technique; Etching of large silicon wafers in the electrochemical cell; Deposit of porous silicon coating on as-prepared solar cells.


Related Articles

  • Electrochemical cell for the preparation of porous silicon. Guerrero-Lemus, R.; Moreno, J.D.; Martinez-Duart, J.M.; Corral, J.L. // Review of Scientific Instruments;Oct96, Vol. 67 Issue 10, p3627 

    Describes the design of an electrochemical cell for the fabrication of porous silicon. Standard electrolytic cells; Advantages and inconveniences of the presently available cells; Optical configuration for the formation of porous silicon under illumination.

  • Macroporous silicon: efficient antireflective layer on crystalline silicon. Fonthal, Faruk; Torres, Ivaldo; Rodriguez, Angel // Journal of Materials Science: Materials in Electronics;Jul2011, Vol. 22 Issue 7, p895 

    macroporous silicon layer (ma-PS) electrochemically grown on crystalline silicon surface can be used as an efficient antireflective layer in optical devices as antireflection coating. In this work, we presented the ma-PS layers fabricated on crystalline silicon (c-Si) n-type and p-type, obtained...

  • The Dependence of Silicon Reactivity on the Constituents of the Etchant Electrolyte and the Effect of Some Postetch Treatments on the Photoluminescence Properties of Porous Silicon. El Zayat, M. Y. // Egyptian Journal of Solids;2003, Vol. 26 Issue 1, p67 

    The cyclic voltammetry (C.V.) technique was used to study the electrode process of silicon in different etchant electrolytes. Also, similar anodizing solutions to the electrolytes used in the C.V. were used for fabricating porous silicon (PS) samples in the electrochemical cell and the effect of...

  • Noise mediated regularity of porous silicon nanostructures. Escorcia-Garcia, J.; Agarwal, V.; Parmananda, P. // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p133103 

    Interaction of noise with nonlinear electrochemical kinetics involving the etching of porous silicon is studied experimentally. It is realized that by monotonically increasing the level of internal noise, one can tune the regularity of the spatial distribution of pores in silicon nanostructures....

  • Porous silicon: From luminescence to LEDs. Collins, Reuben T.; Fauchet, Philippe M. // Physics Today;Jan97, Vol. 50 Issue 1, p24 

    Highlights the development of a technology that would permit optical, and electronic devices to be easily and inexpensively integrated on a silicon wafer. Benefits of this advance on display, communications, computer, and other related technologies; Importance of putting light-emitting diodes...

  • Electrical conductance simulation of two-dimensional directional site percolated networks for... Yeh, Everett C.-C.; Hsu, Klaus Y.-J. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p326 

    Presents information on the modeling of two-dimensional porous silicon structures, as two-dimensional directional site percolated networks (2D-DSPNs). Information on the 2D-DSPNs models; Identification of the effects of porosity and geometrical connection on the electrical conduction behavior.

  • Erbium-doped porous silicon luminesces at 1.54 microns.  // Laser Focus World;Jul94, Vol. 30 Issue 7, p13 

    Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.

  • Photoeffect in porous silicon. Hlavka, Jan // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1404 

    Reports on the measurement of the photoeffect in porous silicon. Origin of the photoeffect; Photoeffect spectral dependencies; Time relaxation.

  • Silicon's future gets brighter.  // R&D Magazine;Apr98, Vol. 40 Issue 5, p11 

    Reports on the development of a process to stabilize the surface of porous silicon. What is porous silicon.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics