TITLE

Anomalous diffusion of lightly implanted As into Si substrate during N[sub 2] annealing

AUTHOR(S)
Aoki, Nobutoshi; Kanemura, Takahisa; Mizushima, Ichiro
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3133
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the anomalous diffusion of lightly implanted As into Si substrate during nitrogen conventional furnace annealing. Observation of two conspicuous features at near-surface and at the tail region; Movement of a large number of As atoms toward the oxide/Si interface; Detection of retarded diffusion at the tail region.
ACCESSION #
4294454

 

Related Articles

  • Diffusion of implanted nitrogen in silicon. Adam, Lahir Shaik; Law, Mark E. // Journal of Applied Physics;3/1/2000, Vol. 87 Issue 5, p2282 

    Provides information on a study which examined the diffusion behavior of nitrogen implanted in silicon. Experimental analysis; Results and discussion.

  • Pd/Zn/Pd/Au and Pd/Zn/Au/LaB[sub 6]/Au ohmic contacts to p-type In[sub 0.53]Ga[sub 0.47]As. Ressel, P.; Leech, P.W.; Reeves, G.K.; Zhou, W.; Kuphal, E. // Applied Physics Letters;3/25/1996, Vol. 68 Issue 13, p1841 

    Examines the resistivity and interfacial characteristics of Pd/Zn/Pd/Au and Pd/Zn/Au/LaB[SUB 6]/Au contacts to p-In[sub 0.53]Ga[sub 0.47]As. Implantation of zinc ions into the interfacial palladium; Degradation of In[sub 0.53]Ga[sub 0.47]As substrate; Effects of incorporating zinc layer of...

  • Thermodynamic guidance for implantation treatments to improve coating-substrate adhesion. Singer, I.L.; Fayeulle, S. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3191 

    Examines the use of ion implanted aluminum atoms to promote adhesion between silicon carbide substrate and Al[sub 2]O[sub 3] coating. Use of ternary and quaternary phase diagrams to help choose and implant aluminum atoms; Mechanism of aluminum diffusion as revealed by Auger sputter depth...

  • Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation. Donovan, E. P.; Spaepen, F.; Turnbull, D.; Poate, J. M.; Jacobson, D. C. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p1795 

    Discusses calorimetric studies of crystallization and relaxation of amorphous silicon and germanium prepared by ion implantation. Determination of the amorphous-crystal interface velocity; Interface velocity for crystallization on substrates; Advantages of ion implantation in the study of...

  • Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme. Hewett, C. A.; Fernandes, M. G.; Lau, S. S. // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p524 

    Discusses a study which detailed low dose ion implantation through the platinum/silicon interface prior to annealing used to yield a planar PrSi/Si interface after annealing. Description of the electrical characteristics of the ion mixed diodes; Uses of silicon-silicon contacts; Information on...

  • Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. Milinovic, V.; Bibic, N.; Dhar, S.; Siljegovic, M.; Schaaf, P.; Lieb, K.P. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 8, p2093 

    In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV14N2+ ion implantation in57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy,...

  • Theory of the characteristic curves of the silver chalcogenide glass inorganic photoresists. Das, Amitabha; Al-Jishi, Radi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1745 

    A theoretical model of the characteristic curves of the silver/chalcogenide glass inorganic photoresists, which is based explicitly on a photoinduced diffusion theory of the photodoping phenomenon, is presented. Besides the photoinduced diffusion of silver in the bulk glass, the role of the...

  • Diffuse interface theory for homogeneous vapor condensation. Gránásy, László // Journal of Chemical Physics;4/1/1996, Vol. 104 Issue 13, p5188 

    The excess free energy of nuclei is evaluated in terms of a characteristic interface thickness related to bulk physical properties. A curvature correction to the surface tension of nuclei up to second order in terms of the characteristic thickness is obtained. A nucleation theory free of...

  • Characterization of interdiffusion coefficients in GaAs-AlAs superlattices with laser Raman spectroscopy. Hara, Naoki; Katoda, Takashi // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2112 

    Describes a method to estimate the interdiffusion coefficients in superlattices. Response of interdiffusion coefficients to annealing; Discussion on the difference in the approximation of compositional variation at the interface; Functionality of thermal instability of superlattices.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics