Anomalous diffusion of lightly implanted As into Si substrate during N[sub 2] annealing

Aoki, Nobutoshi; Kanemura, Takahisa; Mizushima, Ichiro
June 1994
Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3133
Academic Journal
Examines the anomalous diffusion of lightly implanted As into Si substrate during nitrogen conventional furnace annealing. Observation of two conspicuous features at near-surface and at the tail region; Movement of a large number of As atoms toward the oxide/Si interface; Detection of retarded diffusion at the tail region.


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