TITLE

High hole mobility in SiGe alloys for device applications

AUTHOR(S)
Ismail, K.; Ce, J.O.; Meyerson, B.S.
PUB. DATE
June 1994
SOURCE
Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the hole mobility in SiGe alloys with Ge content grown by ultrahigh-vacuum chemical vapor deposition. Measurement of hole mobilities at room temperature; Resistivity of two-dimensional hole channel at room temperature; Two-dimensional sheet hole density at 3x10[sup 12] centimeter[sup -2].
ACCESSION #
4294450

 

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