Temperature-insensitive offset reduction in a Hall effect device

Mani, R.G.; von Klitzing, K.
June 1994
Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3121
Academic Journal
Examines the dual boundary specific Hall effects of double boundary device using the double current technique at above room temperature. Cancellation of offset voltage in the Hall effect; Reduction of temperature-dependent offset from the T dependence of the resistance; Improvement of Hall element sensitivity to the external magnetic field.


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