InGaAs/GaAs shallow quantum well optical switches grown by metalorganic vapor phase epitaxy

Lee, S.W.; Ce, K.U.; Kim, S.W.; Park, S.; Kwon, O'D.; Goossen, K.W.; Pei, S.S.
June 1994
Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3065
Academic Journal
Fabricates optical switches from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. Exhibition of sharp exciton peaks at room temperature; Absence of strain-induced degradations; Dependence of the epitaxial quality on substrate dopants.


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