Dimerization induced incorporation nonlinearities in GaAsP

Cunningham, J.E.; Santos, M.B.; Goossen, K.W.; Williams, M.D.; Jan, W.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2418
Academic Journal
Examines the incorporation of arsenic and phosphorus into gallium arsenic phosphide (GaAsP) by gas-source molecular beam epitaxy. Evidence for anion dimerization during solid state incorporation; Covalent bond length between As dimers and GaAsP lattice; Instability of As dimers on GaAs lattice surface at equilibrium relaxation.


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