TITLE

High efficiency indium gallium arsenide photovoltaic devices for thermophotovoltaic power systems

AUTHOR(S)
Wilt, David M.; Fatemi, Navid S.; Hoffman Jr., Richard W.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David; Lowe, Roland; Fauer, Maria; Jain, Raj K.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2415
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a model of InGaAs photovoltaic devices for thermophotovoltaic power generation. Air mass efficiency and internal quantum yield of InGaAs solar cells; Lattice mismatch between band gap cells and broadband emitters.
ACCESSION #
4294364

 

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