Threshold dose for ion-induced intermixing in InGaAs/GaAs quantum wells

Allard, L.B.; Aers, G.C.; Piva, P.G.; Poole, P.J.; Buchanan, M.; Templeton, I.M.; Jackman, T.E.; Charbonneau, S.; Akano, U.; Mitchell, I.V.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2412
Academic Journal
Examines the threshold dose for ion-induced intermixing in indium gallium arsenide/gallium arsenide quantum wells. Occurrence of interdiffusion in quantum wells; Creation of quantum wire and dot nanostructures by selective band gap broadening; Susceptibility of quantum wells to ion damage.


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