TITLE

Back side Raman measurements on Ge/Pd/n-GaAs ohmic contact structures

AUTHOR(S)
Wuyts, K.; Watte, J.; Silverans, R.E.; Van Hove, M.; Borghs, G.; Palmstrom, C.J.; Florez, L.T.; Munder, H.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2406
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the Raman measurements on germanium/palladium/n-gallium arsenide (Ge/Pd/n-GaAs) ohmic contact structures. Enhancement of Ge doping of GaAs substrate surface layers; Use of back side thinning procedure for GaAs metallization; Presence of quasi-two-dimensional electron gas in the etched PdGe/Ge/GaAs structure.
ACCESSION #
4294361

 

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