Back side Raman measurements on Ge/Pd/n-GaAs ohmic contact structures

Wuyts, K.; Watte, J.; Silverans, R.E.; Van Hove, M.; Borghs, G.; Palmstrom, C.J.; Florez, L.T.; Munder, H.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2406
Academic Journal
Presents the Raman measurements on germanium/palladium/n-gallium arsenide (Ge/Pd/n-GaAs) ohmic contact structures. Enhancement of Ge doping of GaAs substrate surface layers; Use of back side thinning procedure for GaAs metallization; Presence of quasi-two-dimensional electron gas in the etched PdGe/Ge/GaAs structure.


Related Articles

  • Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs. Katz, A.; Abernathy, C. R.; Pearton, S. J.; Weir, B. E.; Savin, W. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2276 

    Presents information on a study which investigated different metallization schemes as potential ohmic contacts for highly carbon-doped -Al[subx]Ga[sub1-x]As. Experimental procedure; Use of the transmission line method for the electrical measurements; Contact resistance values achieved.

  • High-temperature diamond p-n junction: B-doped homoepitaxial layer on N-doped substrate. Borst, T.H.; Strobel, S.; Weis, O. // Applied Physics Letters;10/30/1995, Vol. 67 Issue 18, p2651 

    Examines the growth of boron-doped homoepitaxial layers on synthetic type Ib substrates. Formation of ohmic contacts; Evaporation of a Mo/Pt/Au sandwich; Observation of green light emission due to electroluminescence.

  • Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts. DeSalvo, Gregory C. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4207 

    Presents a study which fabricated ultrathin, highly conductive gallium arsenide and aluminum arsenide p/n junction diodes using delta doping. Use of the gallium arsenide tunnel junction; Application of the delta doping of tunnel junctions to form interdevice ohmic contacts; Information on the...

  • A thermally activated solid state reaction process for fabricating ohmic contacts to semiconducting diamond. Moazed, K. L.; Zeidler, J. R.; Taylor, M. J. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2246 

    Presents techniques to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Information on the ohmic contacts using a thermally activated solid state reaction; Adaptation of photolithographic techniques for diamond substrates; Electrical measurements of the diamond...

  • Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts. Sokolovskiı, B. S.; Ivanov-Omskiı, V. I.; Il'chuk, G. A. // Semiconductors;Dec2005, Vol. 39 Issue 12, p1361 

    Special features of the electroluminescence of uniformly doped graded-gap structures with blocking and ohmic contacts are studied theoretically. Analytical expressions for the spectral and integrated electroluminescence intensities are derived and analyzed in the case of a constant gradient of...

  • Contact resistance measurements on p-type 6H-SiC. Crofton, J.; Barnes, P.A.; Williams, J.R.; Edmond, J.A. // Applied Physics Letters;1/25/1993, Vol. 62 Issue 4, p384 

    Examines the contact resistance measurements for aluminum-titanium ohmic contacts to 6H-SiC as a function of epitaxial doping. Use of circular transmission line method to measure specific contact resistance; Determination of the Schottky barrier image force lowering of the; Comparison between...

  • Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN. Maeda, T.; Koide, Yasuo; Murakami, Masanori // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4145 

    Studies the effects of a nickel monoxide (NiO) layer on the electrical properties of NiAu-based ohmic contacts for p-gallium arsenide (GaN) by depositing a p-type NiO layer on the p-GaN using a sputter-deposition technique. P-type conduction of NiO layers doped with Li[NiO(Li); Sheet...

  • Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy. Afroz Faria, Faiza; Guo, Jia; Zhao, Pei; Li, Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; (Grace) Xing, Huili; Jena, Debdeep // Applied Physics Letters;7/16/2012, Vol. 101 Issue 3, p032109 

    Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n+ metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (RC) and sheet resistance (Rsh) as a function of corresponding GaN free carrier concentration (n) were measured. Very...

  • Resonant Raman scattering and photoluminescence at the E[sub 0] band gap of carbon-doped AlAs. Wagner, J.; Fischer, A.; Ploog, K. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3482 

    Investigates resonant Raman scattering and photoluminescence at the E[sub 0] band gap of carbon-doped aluminum arsenide (AlAs). Use of a heated graphite filament as a carbon source in obtaining doping levels; Observation of excitation above the AlAs E[sub o] band-gap energy radiative...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics