Evidence for population inversion in excited electron states of a double barrier resonant

Cockburn, J.W.; Skolnick, M.S.; Whittaker, D.M.; Buckle, P.D.; Willcox, A.R.K.; Smith, G.W.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2400
Academic Journal
Examines the population inversion in excited electron states of gallium arsenide-aluminum gallium arsenide double barrier resonant tunneling structure. Rate of electron-optic phonon scattering; Effects of energy electron distributions to photoluminescence peaks.


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