TITLE

Low-temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor

AUTHOR(S)
Roberts, J.C.; Boutros, K.S.; Bedair, S.M.; Look, D.C.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the low-temperature (LT) growth of gallium arsenide thin films by photoassisted metalorganic chemical vapor deposition. Use of silane as the dopant gas; Levels of doping and electron mobilities in LT photoassisted doped films; Process for enhancing the growth rate of the thin films.
ACCESSION #
4294357

 

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