Laser-induced sputtered neutral mass spectrometry study of arsenic concentration profiles in a

Higashi, Yasuhiro; Maruo, Tetsuya; Homma, Yoshikazu; Kodate, Jun'ichi; Miyake, Masayasu
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2391
Academic Journal
Investigates the arsenic concentration profiles in silicon/single-crystal silicon system by sputtered neutral mass spectroscopy. Implantation of arsenic ions in polycrystalline silicon films; Suppression of secondary ion generation; Use of argon as primary ion beam in the ionization process.


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