TITLE

Laser-induced sputtered neutral mass spectrometry study of arsenic concentration profiles in a

AUTHOR(S)
Higashi, Yasuhiro; Maruo, Tetsuya; Homma, Yoshikazu; Kodate, Jun'ichi; Miyake, Masayasu
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2391
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the arsenic concentration profiles in silicon/single-crystal silicon system by sputtered neutral mass spectroscopy. Implantation of arsenic ions in polycrystalline silicon films; Suppression of secondary ion generation; Use of argon as primary ion beam in the ionization process.
ACCESSION #
4294355

 

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