Ultraviolet photosulfidation of III-V compound semiconductors: a new approach to surface

Ashby, Carol I.H.; Zavadil, Kevin R.; Howard, Arnold J.; Hammons, B.E.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2388
Academic Journal
Presents a passivation technique for type III-V compound semiconductors based on ultraviolet photolysis of sulfur vapor. Attribution of photosulfidation to the increased photoluminescence intensity from gallium arsenide (GaAs) samples; Formation of surface sulfide on GaAs surfaces; Absence of hydrogenic sources in the passivation process.


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