Photoluminescence of chemically vapor deposited Si on silica aerogels

Wanqing Cao; Hunt, Arlon J.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2376
Academic Journal
Examines the photoluminescence of porous silicon (Si) grown on silica aerogels by chemical vapor deposition. Decomposition of SiH[sub 4] on the substrate; Presence of crystalline Si particles in the annealed argon sample; Overview of the quantum confinement theory.


Related Articles

  • Ex situ prepared Si nanocrystals embedded in silica glass: Formation and characterization. Švrček, V.; Slaoui, A.; Muller, J.-C. // Journal of Applied Physics;3/15/2004, Vol. 95 Issue 6, p3158 

    In this article we present an alternative approach for the fabrication of silicon nanocrystals (Si–nc) prepared ex situ of the silicon dioxide (SiO[sub 2]) host matrix. The Si–nc are scratched from porous silicon layers and incorporated into a host spin-on-glass SiO[sub 2] based...

  • Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates. Mynbaeva, M.; Saddow, S. E.; Melnychuk, G.; Nikitina, I.; Scheglov, M.; Sitnikova, A.; Kuznetsov, N.; Mynbaev, K.; Dmitriev, V. // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p117 

    Epitaxial 4H-SiC layers were grown by chemical vapor deposition (CVD) on porous silicon carbide. Porous SiC substrates were fabricated by the formation of a 2 to 15 μm thick porous SiC layer on commercial off-axis 4H-SiC substrates. The thickness of CVD grown layers was about 2.5 μm. The...

  • Spontaneous and stimulated emission from photopumped GaN grown on SiC. Zubrilov, A.S.; Nikolaev, V.I. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p533 

    Examines the photoluminescence of gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition. Calculation of the temperature dependence of GaN band gap; Shift of photoluminescence output to lower photon energy; Observation of edge cavity stimulated...

  • Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure. Culp, T.D.; Hommerich, U. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p368 

    Studies the photoluminescence properties of metal-organic chemical vapor deposition GaAs:Er as a function of temperature and applied hydrostatic pressure. Spectral characteristics; Effects on the low temperature density; Thermal quenching properties.

  • Synthesis of 3C–SiC nanowhiskers and emission of visible photoluminescence. Zhang, Yafei; Nishitani-Gamo, Mikka; Xiao, Changyong; Ando, Toshihiro // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p6066 

    Single-crystal 3C–SiC nanowhiskers with [111] axial orientation have been synthesized directly on an Si substrate with a large area and high surface density. The nanowhiskers were grown into the Si substrate like a foundation pile by using an Fe film as a catalyst in a microwave plasma...

  • Photoluminescence and transport studies of boron in 4h SiC. Sridhara, S.G.; Clemen, L.L.; Devaty, R.P.; Choyke, W.J.; Larkin, D.J.; Kong, H.S.; Troffer, T.; Pensl, G. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7909 

    Provides information on an experiment which investigated the low temperature photoluminescence (LTPL) of the recombination of a neutral receptor (bound exciton) complex for silicon site boron observed in homoepitaxial films of 4H SiC grown by chemical vapor deposition (CVD). Methodology used to...

  • Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Nittono, Takumi; Sugitani, Suehiro; Hyuga, Fumiaki // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5387 

    Presents a study which characterized the photoluminescence of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition. Experimental details; Results and discussion; Conclusion.

  • Reabsorption, band-gap narrowing, and the reconciliation of photoluminescence spectra with... Sieg, R.M.; Ringel, S.A. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p448 

    Analyzes the effects of reabsorption and band-gap narrowing (BGN) on experimental photoluminescence (PL) spectra of n-InP grown by metalorganic chemical vapor deposition. Measured PL spectra of InP; Reabsorption effects on the photoluminescence spectra; Band-gap narrowing near Brillouin zone...

  • Photoluminescence spectroscopy of Mg-doped GaN. Sheu, J.K.; Su, Y.K. // Journal of Applied Physics;10/15/1998, Vol. 84 Issue 8, p4590 

    Presents a study in which Mg-doped GaN films were grown by metalorganic chemical vapor deposition with various Cp2Mg flow rates. Methodology used to conduct the study; Exploration of the origin of the observed emission band; Characterization of Mg-doped p-type GaN films; Findings of the study.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics