Photoluminescence of Si/SiGe/Si quantum wells on separation by oxygen implantation substrate

Nayak, D.K.; Usami, N.; Fukatsu, S.; Shiraki, Y.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2373
Academic Journal
Examines the photoluminescence of silicon/silicon germanide/silicon quantum wells grown on separation by oxygen implantation (SIMOX) substrate. Evidence for photoluminescence and carrier confinement in the quantum well; Effects of silicon dioxide on the photoluminescence spectra of SIMOX; Optical confinement of incident beam in the cavity.


Related Articles

  • Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells. Carmody, C.; Tan, H. H.; Jagadish, C. // Journal of Applied Physics;4/15/2003, Vol. 93 Issue 8, p4468 

    We have investigated the effect of implantation at room temperature and 200°C into lattice matched InP/InGaAs quantum well structures capped with InP and InGaAs layers. P[sup -] ions of 20 keV were implanted into the cap layer at doses of 1 × 10[sup 12] - 1 × 10[sup 14] cm[sup -2]....

  • Effect of implantation dose on photoluminescence decay times in intermixed GaAs/AlGaAs quantum.... Piva, P.G.; Charbonneau, S. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2252 

    Examines the effect of ion implantation induced intermixing on the radiative lifetimes in gallium arsenide/aluminum gallium arsenide quantum wells. Use of the time-resolved photoluminescence (TRPL); Enhancement of carrier lifetime below the critical dose; Comparison between the sensitivity of...

  • Deep photoluminescence in Si/Si[sub 1-x]Ge[sub x]/Si quantum wells created by ion implantation.... Sturm, J.C.; St. Amour, A. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2291 

    Demonstrates photoluminescence in silicon/Si[sub 1-x]Ge[sub x] quantum wells (QW) by ion implantation and annealing. Characteristics of chemical vapor deposition (CVD) grown QW; Comparison of the observe luminescence in molecular beam epitaxy (MBE) and CVD grown materials; Mechanisms...

  • Depth profile of the implantation-enhanced intermixing of Ga...focused ion beam in AlAs/GaAs... Eshlaghi, Soheyla; Meier, C. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6605 

    Presents information on a study which determined the implantation-induced intermixing depth profile for ions by photoluminescence measurements on samples containing quantum wells. Application of focused ion beam implantation method; Effect of intermixing to the direction of depth dependence of...

  • Optical study of Ar+ implantation-induced damage in GaAs/GaAlAs heterostructures. Kieslich, A.; Straka, J.; Forchel, A. // Journal of Applied Physics;12/15/1992, Vol. 72 Issue 12, p6014 

    Discusses a study which investigated the depth range of ion implantation damage in GaAs/GaAlAs quantum wells. Use of the photoluminescence emission intensity of single quantum wells; Result of ion implantation along the major crystallographic axes; Implantation-induced damage-based techniques;...

  • Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures. Laruelle, F.; Bagchi, A.; Tsuchiya, M.; Merz, J.; Petroff, P. M. // Applied Physics Letters;4/16/1990, Vol. 56 Issue 16, p1561 

    We show that focused ion beam implantation of Ga into GaAlAs/GaAs quantum wells occurs much deeper than expected from theory of implantation into amorphous GaAs and that the lateral straggling is one order of magnitude smaller than predicted by the same theories. We show that channeling is the...

  • Threshold dose for ion-induced intermixing in InGaAs/GaAs quantum wells. Allard, L.B.; Aers, G.C.; Piva, P.G.; Poole, P.J.; Buchanan, M.; Templeton, I.M.; Jackman, T.E.; Charbonneau, S.; Akano, U.; Mitchell, I.V. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2412 

    Examines the threshold dose for ion-induced intermixing in indium gallium arsenide/gallium arsenide quantum wells. Occurrence of interdiffusion in quantum wells; Creation of quantum wire and dot nanostructures by selective band gap broadening; Susceptibility of quantum wells to ion damage.

  • Suppressed photocurrent multiple-quantum-well optical modulators by proton implantation. Woodward, T.K.; Tell, B. // Applied Physics Letters;2/10/1992, Vol. 60 Issue 6, p742 

    Investigates the reduction of power dissipation in absorptive semiconductor optical modulators via reduction in photocurrent. Techniques used to reduce the photocurrent in multiple-quantum-well modulators; Application of asymmetric self-electro-optic devices; Use of proton implantation.

  • Photoluminescence of InAs/AlSb single quantum wells. Fuchs, F.; Schmitz, J. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1665 

    Describes the photoluminescence of indium arsenide/aluminum antimonide (AlSb) single quantum wells. Influence of the acceptor level screening in the AlSb barrier on the low energy blueshifting of the spectra; Limitation of the high energy blueshifting of the luminescence spectra; Existence of a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics