Long-wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using

Park, J.S.; Lin, T.L.; Jones, E.W.; Del Castillo, H.M.; Gunapala, S.D.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2370
Academic Journal
Demonstrates the silicon germanide/silicon (SiGe/Si) heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers. Use of boron source to achieve high doping concentrations; Components of the infrared detectors; Free carrier absorption and quantum efficiencies of infrared detectors.


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