TITLE

Long-wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using

AUTHOR(S)
Park, J.S.; Lin, T.L.; Jones, E.W.; Del Castillo, H.M.; Gunapala, S.D.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2370
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the silicon germanide/silicon (SiGe/Si) heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers. Use of boron source to achieve high doping concentrations; Components of the infrared detectors; Free carrier absorption and quantum efficiencies of infrared detectors.
ACCESSION #
4294348

 

Related Articles

  • Elemental boron-doped p[sup +]-SiGe layers grown by molecular beam epitaxy for infrared detector.... Lin, T.L.; George, T. // Applied Physics Letters;1/20/1992, Vol. 60 Issue 3, p380 

    Analyzes the fabrication of silicon germanide (SiGe)/silicon heterojunction internal photoemission detectors using molecular beam epitaxy. Use of elemental boron as dopant source; Observation of good crystalline quality in SiGe layer; Detection of lower misfit dislocation density in SiGe.

  • Design and optimization of GaAs/AlGaAs heterojunction infrared detectors. Esaev, D. G.; Rinzan, M. B. M.; Matsik, S. G.; Perera, A. G. U. // Journal of Applied Physics;10/15/2004, Vol. 96 Issue 8, p4588 

    Design, modeling, and optimization principles for GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors for a broad spectral region are presented. Both n-type and p-type detectors with a single emitter or multiemitters, grown on doped and undoped...

  • Bias effects in high performance GaAs homojunction far-infrared detectors. Shen, W.Z.; Perera, A.G.U. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2677 

    Demonstrates the bias effects in high performance gallium arsenide homojunction far-infrared detectors. Measurement of the bias dependence of quantum efficiency, detectivity, and cutoff wavelength; Effect of the layer number on detector performance and uniformity; Comparison with...

  • Fabrication and characterization of YBa[sub 2]Cu[sub 3]O[sub 7] step-edge junction arrays. Reuter, W.; Siegel, M.; Herrmann, K.; Schubert, J.; Zander, W.; Braginski, A.I.; Muller, P. // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2280 

    Details the fabrication of YBa[sub 2]Cu[sub 3]O[sub 7] step-edge junction arrays. Measurement of the current-voltage characteristics; Frequency of the Josephson emission; Monitor of the intermediate frequency signal.

  • Internal photoemission studies of artificial band discontinuities at buried GaAs(100)/GaAs(100).... dell'Orto, Tiziana; Almeida, J. // Applied Physics Letters;4/18/1994, Vol. 64 Issue 16, p2111 

    Examines the internal photoemission of artificial band discontinuities at buried gallium arsenide/gallium arsenide homojunctions. Illumination of homojunctions by monochromatic photons; Details on the energy barriers of photoexciton; Use of tungsten-halogen lamp and double grating monochromator...

  • Characterization of semiconductor heterojunctions using internal photoemission. Chen, Ing-Shin; Jackson, T. N.; Wronski, C. R. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8470 

    Examines the internal photoemission process for an ideal semiconductor heterojunction structure. Description on the internal photoemission process; Discussion on quantum transmission probability; Emitter density of states.

  • Band alignment at organic-inorganic semiconductor interfaces: ...NPD and CuPc on In...P (110). Chasse, T.; Hill, I.G. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6589 

    Focuses on a study on photoemission of electronic properties of organic-inorganic semiconductor heterojunctions formed between two hole transport materials. Experiments; Results; Discussion.

  • Band alignment at CdS/CulnS[sub 2] heterojunction. Hashimoto, Yoshio; Takeuchi, Kazuhiro // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p980 

    Examines band alignment at CdS/CulnS[sub 2] heterojunction. Analysis of band offsets at CdS/CuInS[2] heterojunctions through x-ray photoemission spectroscopy; Role of band offsets in the electrical properties of a heterojunction solar cell; Effect of cyanide treatment on the band offsets.

  • Demonstration of Si homojunction far-infrared detectors. Perera, A. G. U.; Shen, W. Z.; Liu, H. C.; Buchanan, M.; Tanner, M. O.; Wang, K. L. // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    Presents the Si homojunction far-infrared detectors. Properties of detectors; Requirements for space astronomy applications; Structure of homojunction interfacial work-function internal photoemission.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics