Kinetic suppression of islanding in impurity-mediated heteroepitaxial growth of germanium on

Osten, H.J.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2356
Academic Journal
Examines the kinetic suppression of islanding in impurity-mediated heteroepitaxial growth of germanium (Ge) on silicon substrates. Energy barrier for site exchange mechanism between Ge adatoms and impurity atoms; Factors influencing the kinetic suppression; Influence of impurity atoms on the energetical configuration of the system.


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