Transmission electron microscopy characterization of In[sub x]Ga[sub 1-x]As substrates grown

McCaffrey, J.P.; Bryskiewicz, B.; Bryskiewicz, T.; Jiran, E.
May 1994
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2344
Academic Journal
Examines the properties of In[sub x]Ga[sub 1-x]As ingots grown by liquid phase electroepitaxy on gallium arsenide substrates. Use of heteroepitaxial lateral overgrowth technique to cover the substrates with silicon dioxide layer; Decrease in dislocation densities in the alloy layer; Occurrence of dislocation nucleation at the seeding windows.


Related Articles

  • Dislocation-free InSb grown on GaAs compliant universal substrates. Ejeckam, F.E.; Seaford, M.L. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p776 

    Examines the formation of a dislocation-free indium antimonide (InSb) grown on an innovative compliant gallium arsenide (GaAs) substrates. Wafer bonding of GaAs layer to a bulk GaAs crystal; Absence of measurable threading dislocation on InSb films grown on compliant substrates; Accounts on the...

  • Effects of doping impurity and growth orientation on dislocation generation in GaAs crystals grown from the melt: A qualitative finite-element study. Zhu, X. A.; Tsai[a], C. T. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2295 

    Studies the effects of doping impurity and growth orientation on dislocation generation in gallium arsenide crystals grown from the melt. Dislocation density generated in the crystal; Influence of the growth orientation during the crystal growth process on the level of reduction; Generation of...

  • Temperature dependence for the onset of plastic yield in undoped and indium-doped GaAs. Hobgood, H. M.; McGuigan, S.; Spitznagel, J. A.; Thomas, R. N. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1654 

    The onset of plastic yield in undoped and highly indium-doped GaAs, prepared by liquid encapsulated Czochralski (LEC) growth, has been determined by uniaxial compression tests over the temperature range 250–600 °C. No distinguishable difference in yield stress is observed between...

  • In situ x-ray topographic observation of dislocation behavior in In-doped GaAs crystals. Tohno, S.; Shinoyama, S.; Katsui, A.; Takaoka, H. // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1204 

    This letter describes the results of in situ observations of dislocation behavior in In-doped GaAs crystals at high temperatures using synchrotron radiation topography and high-temperature stressing apparatus. The generation and propagation processes of dislocations in a preyield stage have been...

  • Homogenization of EL2 defect concentration of dislocation-free liquid-encapsulated-Czochralski GaAs:In in its growth direction. Kitagawara, Y.; Takenaka, T. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2890 

    Deals with the homogenization of EL2 defect concentration for dislocation-free indium-doped liquid-encapsulated-Czochralski gallium arsenide in its growth axial direction. Existence of characteristic axial distributions of EL2 and resistivity; Origin of the axial inhomogeneity; Mechanism to...

  • Doping of low-temperature GaAs and GaMnAs with carbon. Schott, G.M.; Rüster, C.; Brunner, K.; Gould, C.; Schmidt, G.; Molenkamp, L.W.; Sawicki, M.; Jakiela, R.; Barcz, A.; Karczewski, G. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4678 

    The incorporation of carbon in low-temperature (LT) GaAs and GaMnAs layers deposited by molecular-beam epitaxy under various growth conditions has been investigated. The lattice parameter depends on Mn content, C content, and the growth conditions which strongly affect Mn, C, and point defect...

  • Anisotropic GaAs island phase grown on flat GaP: A Stranski-Krastanow-formed corrugated surface. Ohlsson, B. J.; Miller, M. S.; Gustafsson, A.; Pistol, M.-E. // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5726 

    A dense phase of GaAs wires forms a corrugated surface in the early stages of strained growth on GaP, assembling from elongated Stranski-Krastanow islands. For a series of samples, the evolution of shape and whisker periodicity has been followed as a function of deposition time. This has been...

  • Direct-bonded GaAs/InGaAs tandem solar cell. Tanabe, Katsuaki; Fontcuberta i Morral, Anna; Atwater, Harry A.; Aiken, Daniel J.; Wanlass, Mark W. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p102106 

    A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-mismatched epitaxial heterostructure growth....

  • Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing. Zhang, X. G.; Zhang, X.G.; Rodriguez, A.; Wang, X.; Li, P.; Jain, F. C.; Jain, F.C.; Ayers, J. E.; Ayers, J.E. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We report the effectiveness of patterned heteroepitaxial processing (PHP) in removing threading dislocations (TDs) from ZnSe epitaxial layers grown on GaAs substrates by metalorganic vapor phase epitaxy. The PHP approach used here involves postgrowth patterning of continuous epitaxial layers...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics