TITLE

Transmission electron microscopy characterization of In[sub x]Ga[sub 1-x]As substrates grown

AUTHOR(S)
McCaffrey, J.P.; Bryskiewicz, B.; Bryskiewicz, T.; Jiran, E.
PUB. DATE
May 1994
SOURCE
Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the properties of In[sub x]Ga[sub 1-x]As ingots grown by liquid phase electroepitaxy on gallium arsenide substrates. Use of heteroepitaxial lateral overgrowth technique to cover the substrates with silicon dioxide layer; Decrease in dislocation densities in the alloy layer; Occurrence of dislocation nucleation at the seeding windows.
ACCESSION #
4294329

 

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