Optical second-harmonic reflection from polycrystalline silicon and its relation to grain

Hua, Y.M.; Hu, C.; Li, G.P.
March 1994
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1277
Academic Journal
Examines the optical second-harmonic generation (SHG) from polycrystalline silicon. Relation of SHG to grain boundaries; Effect of dangling bonds on second order nonlinear susceptibility.


Related Articles

  • Dot patterns from second-harmonic and sum-frequency generation in polycrystalline ZnSe. Chinh, Tran Duc; Seibt, Wolfgang; Siegbahn, Kai // Journal of Applied Physics;9/1/2001, Vol. 90 Issue 5 

    During a comparative study of second-harmonic generation (SHG) and sum-frequency generation (SFG) in single-crystal and polycrystalline ZnSe, the polycrystalline material showed a dot pattern in the SHG as well as in the SFG output. No such pattern was found in the output from the single-crystal...

  • Determination of crystallographic orientation of YBa2Cu3Ox grains from their optical twin patterns. Verhoeven, J. D.; Gibson, E. D. // Applied Physics Letters;4/4/1988, Vol. 52 Issue 14, p1190 

    Polycrystalline arrays of YBa2Cu3Ox grains display optical twin patterns and flat sides. The long sides of elongated grains are basal planes, {001}, and the twin planes are {110} planes. A technique is presented here for evaluating the crystallographic orientation of an elongated grain from the...

  • Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon. Lu, Jinggang; Wagener, Magnus; Rozgonyi, George; Rand, James; Jonczyk, Ralf // Journal of Applied Physics;7/1/2003, Vol. 94 Issue 1, p140 

    The effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential...

  • Large low-field magnetoresistance over a wide temperature range induced by weak-link grain boundaries in La[sub 0.7]Ca[sub 0.3]MnO[sub 3]. Wang, X. L.; Dou, S. X.; Liu, H. K.; Ionescu, M.; Zeimetz, B. // Applied Physics Letters;7/20/1998, Vol. 73 Issue 3 

    Polycrystalline bulk porous samples with a large number of weak-link grain boundaries and high density polycrystalline bulk samples with strong-link boundaries were synthesized by conventional solid-state reaction and a partial melting technique. The weak-link samples showed large...

  • Observation of second-harmonic generation in an oriented glassy nematic phase of a closo-decaborane derivative. Miniewicz, Andrzej; Samoc, Anna; Samoc, Marek; Kaszynski, Piotr // Journal of Applied Physics;8/1/2007, Vol. 102 Issue 3, p033108 

    The optical second-harmonic generation (SHG) and the linear optical properties were investigated in a planar cell containing aligned nonchiral nematic derivative of B10H102-: 1-(4-heptyloxypyridin-1-yl)-10-(4-pentyl-1-thiacyclohexyl)-closo-decaborane (HPTD) as a function of temperature. The...

  • Characterization of the quality of ZnO thin films using reflective second harmonic generation. Yi-Jen Huang; Kuang-Yao Lo; Chung-Wei Liu; Chun-Chu Liu; Sheng-Yuan Chu // Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p091904 

    A polar mirror symmetrical contribution originated from the arrangement of grain boundaries existing in the ZnO film is detected by reflective second harmonic generation pattern. The ordering of ZnO grain boundary is dependent on the kinetic energy of deposited atoms and affects the quality of...

  • Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon. Wong, C. Y.; Grovenor, C. R. M.; Batson, P. E.; Smith, D. A. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p438 

    Measures the equilibrium arsenic segregation to the grain boundaries of polycrystalline silicon directly by x-ray microanalysis. Background on arsenic-doped polycrystalline silicon; Direct and indirect techniques used to study the segregation of dopant atoms and contamination species to grain...

  • Negative-resistance characteristics of polycrystalline silicon resistors. Ramkumar, K.; Satyam, M. // Journal of Applied Physics;7/1/1987, Vol. 62 Issue 1, p174 

    Focuses on the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors. Effects of self-heating of the resistor on the transportation of carriers across the grain-boundary barrier; Equation of the potential barrier at the grain boundary; Description of...

  • Electrical measurement of the dopant segregation profile at the grain boundary in silicon bicrystals. Broniatowski, A. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4516 

    Presents a study that proposed a method of determining the dopant concentration profile at the grain boundaries in polycrystalline semiconductors. Features of the proposed method; Measurement of the dopant density from the temperature dependence of the boundary impedance; Application of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics