TITLE

Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by

AUTHOR(S)
Wada, Morio; Hosomatsu, Haruo
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1265
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the fabrication of a lattice-mismatched indium gallium arsenide/indium arsenic phosphide (InAsP) photodiodes grown by metalorganic vapor-phase epitaxy. Use of indium phosphide/InAsP cap layer and InAsP strained superlattices; Properties of the lattice-mismatched photodiodes; Measurement of external quantum efficiencies.
ACCESSION #
4294258

 

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