Wide wavelength and low dark current lattice-mismatched InGaAs/InAsP photodiodes grown by

Wada, Morio; Hosomatsu, Haruo
March 1994
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1265
Academic Journal
Demonstrates the fabrication of a lattice-mismatched indium gallium arsenide/indium arsenic phosphide (InAsP) photodiodes grown by metalorganic vapor-phase epitaxy. Use of indium phosphide/InAsP cap layer and InAsP strained superlattices; Properties of the lattice-mismatched photodiodes; Measurement of external quantum efficiencies.


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