TITLE

Ion implantation of porous silicon

AUTHOR(S)
Peng, C.; Fauchet, P.M.; Rehm, J.M.; McLendon, G.L.; Seiferth, F.; Kurinec, S.K.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1259
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.
ACCESSION #
4294256

 

Related Articles

  • Ion implantation of porous gallium phosphide. Ushakov, V. V.; Dravin, V. A.; Mel´┐Żnik, N. N.; Zavaritskaya, T. V.; Loiko, N. N.; Karavanskii, V. A.; Konstantinova, E. A.; Timoshenko, V. Yu. // Semiconductors;Aug98, Vol. 32 Issue 8, p886 

    The effect of irradiation by Ar ions and thermal annealing on the properties of porous gallium phosphide (por-GaP) obtained by electrolytic methods is investigated. It is shown on the basis of Raman scattering and photoluminescence data that, in contrast with porous silicon, por-GaP does not...

  • Nanocrystal size modifications in porous silicon by preanodization ion implantation. Pavesi, L.; Giebel, G. // Applied Physics Letters;10/24/1994, Vol. 65 Issue 17, p2182 

    Describes the nanocrystal size modifications in porous silicon by preanodization ion implantation. Methods used to determine the structure of porous silicon samples; Observation of a porosity increase, a blue shift of the luminescence peak and a widening of the phonon resonance; Effect of the...

  • Control of porous silicon luminescent pattern formation by ion implantation. Xi-Mao Bao; Hai-Qiang Yang // Applied Physics Letters;10/18/1993, Vol. 63 Issue 16, p2246 

    Examines the control of luminescent pattern formation in porous silicon (Si). Amorphization of crystal Si by self-implantation; Comparison between the luminescence in the crystal and preamorphized regions; Effects of anodization on porous Si.

  • Intense blue-light emission from carbon-plasma-implanted porous silicon. Liu, Weili; Zhang, Miao; Lin, Chenglu; Zeng, Zhaoming; Wang, Lianwei; Chu, Paul K. // Applied Physics Letters;1/1/2001, Vol. 78 Issue 1, p37 

    We have investigated the room-temperature photoluminescence (PL) characteristics of porous-silicon plasma implanted with carbon. Before implantation, the porous silicon made by anodizing emits intense orange light. After carbon-plasma-immersion ion implantation, the orange light disappears and...

  • Optical properties of erbium-implanted porous silicon microcavities. Reece, P.J.; Gal, M.; Tan, H.H.; Jagadish, C. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3363 

    We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an...

  • Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon. Zhenghua An; Fu, Ricky H.L.; Weili Li; Peng Chen; Chu, Paul K.; Li, K.F.; Luo, L.; Tam, H.L.; Cheah, K.W.; Chenglu Lin // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p248 

    Low-temperature photoluminescence in the infrared region of hydrogen implanted single crystalline silicon is investigated. Both beam-line ion implantation and plasma immersion ion implantation (PIII) are used. The beam-line implanted samples show a broad photoluminescence band below the band...

  • Porous silicon: From luminescence to LEDs. Collins, Reuben T.; Fauchet, Philippe M. // Physics Today;Jan97, Vol. 50 Issue 1, p24 

    Highlights the development of a technology that would permit optical, and electronic devices to be easily and inexpensively integrated on a silicon wafer. Benefits of this advance on display, communications, computer, and other related technologies; Importance of putting light-emitting diodes...

  • Electrical conductance simulation of two-dimensional directional site percolated networks for... Yeh, Everett C.-C.; Hsu, Klaus Y.-J. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p326 

    Presents information on the modeling of two-dimensional porous silicon structures, as two-dimensional directional site percolated networks (2D-DSPNs). Information on the 2D-DSPNs models; Identification of the effects of porosity and geometrical connection on the electrical conduction behavior.

  • Erbium-doped porous silicon luminesces at 1.54 microns.  // Laser Focus World;Jul94, Vol. 30 Issue 7, p13 

    Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics