Ion implantation of porous silicon

Peng, C.; Fauchet, P.M.; Rehm, J.M.; McLendon, G.L.; Seiferth, F.; Kurinec, S.K.
March 1994
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1259
Academic Journal
Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.


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