TITLE

Two-dimensional study on the effects of nonamorphizing silicon implantation damage on phosphorus

AUTHOR(S)
Frank, Carlos X.; Law, Mark E.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1254
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the effect of nonamorphizing silicon implantation damage on phosphorus diffusion. Use of the two-dimensional technique to compare damaged and nondamaged areas; Measurement of junction depth under stripes of varying widths; Analysis of the decaying profile of junction depth as a function of increasing stripe width.
ACCESSION #
4294254

 

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