Two-dimensional study on the effects of nonamorphizing silicon implantation damage on phosphorus

Frank, Carlos X.; Law, Mark E.
March 1994
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1254
Academic Journal
Determines the effect of nonamorphizing silicon implantation damage on phosphorus diffusion. Use of the two-dimensional technique to compare damaged and nondamaged areas; Measurement of junction depth under stripes of varying widths; Analysis of the decaying profile of junction depth as a function of increasing stripe width.


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