Doping and damage dose dependence of implant induced transient enhanced diffusion below the

Griffin, P.B.; Lever, R.F.; Packan, P.A.; Plummer, J.D.
March 1994
Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1242
Academic Journal
Investigates the doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold. Importance of dopant ion implantation on integrated circuit production; Use of a test structure to separate the effect of doping concentration from the damage dose; Analysis of the defect-doping reaction model.


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