Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Warren, W.L.; Fleetwood, D.M.; Schwank, J.R.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Maszara, W.P.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p508
Academic Journal
Reports the spectroscopic identification of oxygen-related donors in the c-silicon substrates of bonded and etchback Si-on-insulator (BESOI) materials near the bottom Si/SiO[sub 2] interface. Defect on BESOI samples; Location of the donor in the c-silicon substrates; Role of the donor in the substrate doping.


Related Articles

  • Nondestructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry. Fried, M.; Lohner, T.; de Nijs, J. M. M.; van Silfhout, A.; Hanekamp, L. J.; Laczik, Z.; Khanh, N. Q.; Gyulai, J. // Journal of Applied Physics;11/15/1989, Vol. 66 Issue 10, p5052 

    Focuses on a study which determined the characterization of silicon-on-insulator structures formed by a buried silicon-nitride layer through spectroscopic ellipsometry. Implantation of nitrogen ions; Methodology of the study; Results and discussion.

  • Formation of Nanocrystalline Silicon Films Using High-Dose H[sup +] Ion Implantation into Silicon-on-Insulator Layers with Subsequent Rapid Thermal Annealing. Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovski&icaron;, A.K.; Zhuravlev, K.S. // Semiconductors;Jan2004, Vol. 38 Issue 1, p107 

    The formation of nanocrystalline Si films as a result of rapid thermal annealing of silicon-on-insulator structures implanted with high doses of H[sup +] ions is studied. It is ascertained that the process of formation of Si nanocrystals is active even at temperatures of 300�400�C and...

  • Interfacial charge modification between SiO2 and silicon. Aronowitz, S.; Zappe, H. P.; Hu, C. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1317 

    A positive flatband voltage shift, ΔVfb [bar_over_tilde:_approx._equal_to]+0.4 V, with respect to unimplanted portions of the same wafer, was obtained when calcium (1×1013 cm-2) was implanted into 87 nm of thermally grown oxide on an n-type <100> substrate and annealed. Calcium acts as a...

  • Single-mode room-temperature emission with a silicon rod lattice. Cluzel, B.; Calvo, V.; Charvolin, T.; Picard, E.; Noé, P.; Hadji, E. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p201111 

    The authors experimentally evidence an increase of light emission efficiency at room temperature in a silicon-on-insulator photonic crystal. The photonic crystal is made of a triangular lattice of silicon rods and operates as a single-mode light extractor. It exhibits a luminescence intensity...

  • Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth. Ryo Matsumura; Ryusuke Kato; Taizoh Sadoh; Masanobu Miyao // Applied Physics Letters;9/8/2014, Vol. 105 Issue 10, p1 

    Large-grain SiGe-crystal-on-insulator is essential for fabrication of devices such as advanced thin film transistors and/or photosensors. For these purposes, rapid-melting growth of amorphous SiGe stripes (7%-20% Si concentration) on insulating substrates is investigated over a wide range of...

  • A High Frequency Compact Noise Model for Double-Gate MOSFET Devices. Lázaro, A.; Cerdeira, A.; Nae, B.; Estrada, M.; Iñíguez, B. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p577 

    Silicon-on-Insulator (SOI) MOSFETs based on multiple gate structures are excellent candidates to become an alternative to conventional bulk technologies. These devices could be used for high-frequency applications due to the significant increase in the transition frequency fT. We present compact...

  • Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers. Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, E.; Claeys, C. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 3, p203 

    The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 μm, Leff = 0.06 to 9.9 μm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices...

  • Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor. Cho, K.H.; Choi, B.H.; Son, S.H.; Hwang, S.W.; Ahn, D.; Park, B.-G.; Naser, B.; Lin, J.-F.; Bird, J.P. // Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p043101 

    We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dID/dVDS spectrum. Our...

  • Investigation of Apertureless NSOM for Measurement of Stress in Strained Silicon-on-Insulator Test Structures. McDonough, Colin; Atesang, Jacob; Wang, Yunfei; Geer, Robert E. // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p94 

    Strain in blanket and patterned silicon-on-insulator (SOI) structures have been investigated via apertureless near-field scanning Raman spectroscopy to investigate the efficacy of so-called tip-enhanced Raman scattering (TERS) for Si strain characterization and metrology for integrated circuit...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics