TITLE

Effective band-gap shrinkage in GaAs

AUTHOR(S)
Harmon, E.S.; Melloch, M.R.; Lundstrom, M.S.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the effective band-gap shrinkage from measurements on heavily doped gallium arsenide (GaAs). Convulsion on the collector current-voltage characteristic of a homojunction bipolar transistor; Band-gap shrinkage in heavily doped p-GaAs; Observation of an effective band-gap widening at a heavy dopings.
ACCESSION #
4294191

 

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