TITLE

Maskless InP wire formation on planar GaAs substrates

AUTHOR(S)
Ahopelto, J.; Lezec, H.; Ochiai, Y.; Usui, A.; Sakaki, H.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p499
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the maskless growth of indium phosphide wires on planar GaAs substrates by hydride vapor phase epitaxy. Growth selectivity; Nucleation of deposited indium phosphide; Manifestation of cross-sectional transmission electron microscope micrographs to the number of wire dislocations.
ACCESSION #
4294190

 

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