Maskless InP wire formation on planar GaAs substrates

Ahopelto, J.; Lezec, H.; Ochiai, Y.; Usui, A.; Sakaki, H.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p499
Academic Journal
Demonstrates the maskless growth of indium phosphide wires on planar GaAs substrates by hydride vapor phase epitaxy. Growth selectivity; Nucleation of deposited indium phosphide; Manifestation of cross-sectional transmission electron microscope micrographs to the number of wire dislocations.


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