Room temperature study of strong lateral quantization effects in InGaAs/InP quantum wires

Ils, P.; Michel, M.; Forchel, A.; Gyuro, I.; Klenk, M.; Zielinski, E.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p496
Academic Journal
Fabricates InGaAs/InP quantum wires with lateral widths by high voltage electron beam lithography and deep wet chemical etching. Room temperature analysis of ultranarrow quantum wires; Observation of a photoluminescence signal; Measurement of the width of the wires and standard band parameters.


Related Articles

  • High-resolution patterning of semiconductors using electron-beam-assisted wet etching. Richter, G.; Schmidt, G.; Molenkamp, L. W.; Bibus, M.; de Boeck, J. // Applied Physics Letters;8/26/2002, Vol. 81 Issue 9, p1693 

    Chemical wet etching as a lithographic technique often suffers from strong underetching underneath the mask, limiting the achievable size of the structures. We have developed a chemical wet etching technique in which the etching rate and anisotropy of the process is controlled by electron-beam...

  • Fabrication of sub-15nm aluminum wires by controlled etching. Morgan-Wall, T.; Hughes, H. J.; Hartman, N.; McQueen, T. M.; Marković, N. // Applied Physics Letters;4/28/2014, Vol. 104 Issue 17, p1 

    We describe a method for the fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process...

  • Thermoelectric Device Based on Vertical Silicon Nanowires for On-Chip Integration. Zhen Wang; Yangyang Qi; Mingliang Zhang; An Ji; Fuhua Yang; Xiaodong Wang // Key Engineering Materials;2014, Vol. 609-610, p789 

    A fabricating process of prototype thermoelectric device based on vertical silicon nanowires (SiNWs) for on-chip integration was presented. The SiNWs with diameter of 200 nm and height of 1 µm were fabricated by electron beam lithography and inductively coupled plasma etching. The gaps...

  • Lateral inhomogeneity in InGaAs-GaAs quantum wire arrays by selective-area metalorganic.... Osowski, M.L.; Panepucci, R. // Applied Physics Letters;2/19/1996, Vol. 68 Issue 8, p1087 

    Focuses on InGaAs-GaAs quantum wire arrays developed by the aid of metalorganic chemical vapor deposition. Acquisition of wire patterns by electron-beam lithography; Presentation of the result of gas phase diffusion growth simulations; Variety of techniques applied.

  • Exciton spin polarization in magnetic semiconductor quantum wires. Ray, O.; Sirenko, A. A.; Sirenko, A.A.; Berry, J. J.; Berry, J.J.; Samarth, N.; Gupta, J. A.; Gupta, J.A.; Malajovich, I.; Awschalom, D. D.; Awschalom, D.D. // Applied Physics Letters;2/28/2000, Vol. 76 Issue 9 

    Electron-beam lithography and wet etching techniques are used to laterally pattern ZnSe/(Zn,Cd,Mn)Se single quantum wells into magnetically active quantum wires with widths ranging from 20 to 80 nm. Photoluminescence spectroscopy as a function of wire width reveals a competition between elastic...

  • Width dependence of magnetoresistance in GaAs-AlGaAs wires fabricated by mesa etching. Takagaki, Y.; Gamo, K.; Namba, S.; Ishida, S.; Takaoka, S.; Murase, K. // Journal of Applied Physics;1/1/1990, Vol. 67 Issue 1, p340 

    Deals with a study which fabricated GaAs-AlGaAs quantum wires with various widths using electron beam lithography and argon ion etching. Fabrication of wires; Measurement of conductance; Effect of the surface damage on the electron transport characteristics.

  • Selective thermal interdiffusion using patterned SiO[sub 2] masks: An alternative approach to buried CdTe/CdMgTe quantum wires. Welsch, M. K.; Scho¨mig, H.; Legge, M.; Bacher, G.; Forchel, A.; Ko¨nig, B.; Becker, C. R.; Ossau, W.; Molenkamp, L. W. // Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2937 

    Buried CdTe/CdMgTe quantum wires with a lateral confinement potential of about 290 meV have been realized. Using electron beam lithography, SiO[sub 2] stripes are defined on a single quantum well sample and a subsequent 2 h annealing step in a Zn atmosphere results in a surprisingly strong...

  • Lateral quantization effects in modulated barrier InGaAs/InP quantum wires. Kerkel, K.; Oshinowo, J. // Applied Physics Letters;12/4/1995, Vol. 67 Issue 23, p3456 

    Fabricates buried InGaAs/InP quantum wires with widths down to 15 nm using a simple approach. Effect of combining electron beam lithography and selective wet chemical etching on InGaAs/InP quantum wells; Formation of InGaAs surface quantum wells; Induction of lateral potential barrier;...

  • Direct three-dimensional patterning using nanoimprint lithography. Li, Mingtao; Chen, Lei; Chou, Stephen Y. // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3322 

    We demonstrated that nanoimprint lithography (NIL) can create three-dimensional patterns, sub-40 nm T-gates, and air-bridge structures, in a single step imprint in polymer and metal by lift-off. A method based on electron beam lithography and reactive ion etching was developed to fabricate NIL...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics