TITLE

Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs(001) vicinal

AUTHOR(S)
Ramsteiner, M.; Wagner, J.; Behr, D.; Jungk, G.; Daweritz, L.; Hey, R.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p490
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the use of Raman scattering to study silicon delta-doped gallium arsenide layers grown by molecular beam epitaxy on GaAs vicinal surfaces. Incorporation of Si dopant atoms on Ga sites; Polarization asymmetry in the Raman scattering; Establishment of real-time high-energy electron diffraction.
ACCESSION #
4294187

 

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