Fluctuating deep-level trap occupancy model for Hooge's 1/f noise parameter for semiconductor

Folkes, Patrick A.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p487
Academic Journal
Derives a theoretical expression of 1/f noise parameter Hooge, for a biased at a small drain-source voltage-Schottky barrier field-effect transistor. Fluctuation occupancy of deep level traps in the depletion region; Variations in the observed values of the parameter of Hooge; Characterization of semiconductor resistor.


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