Growth mode evolution during homoepitaxy of GaAs (001)

Johnson, M.D.; Sudijono, J.; Hunt, A.W.; Orr, B.G.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p484
Academic Journal
Demonstrates scanning tunneling microscopy studies performed on gallium arsenide homoepitaxial films grown by molecular-beam epitaxy. Dynamical transition from island nucleation and coalescence; Characteristics distance for the surface in the steady state; Connection between the early stage nucleation properties and the asymptotic step density.


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