GaAs/AlAs trench-buried quantum wires with nearly rectangular cross sections grown by

Sogawa, T.; Ando, S.; Kanbe, H.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p472
Academic Journal
Demonstrates the fabrication of small and steep lateral heterostructures using U-grooved aluminum arsenide trenches grown by metalorganic chemical vapor deposition on v-grooved substrates. Formation of trench structures with vertical sidewalls; Reduction of trench width; Confirmation of two-dimensional quantum confinement.


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