Subpicosecond switching in a current injected GaAs/AlGaAs multiple-quantum-well nonlinear

Lee, S.G.; McGinnis, B.P.; Jin, R.; Yumoto, J.; Khitrova, G.; Gibbs, H.M.; Binder, R.; Koch, S.W.; Peyghambarian, N.
January 1994
Applied Physics Letters;1/24/1994, Vol. 64 Issue 4, p454
Academic Journal
Reports an ultrafast and low energy switching behavior in an injected gallium arsenide compound multiple quantum well strip-located nonlinear directional coupler. Application of pump-and-probe method; Improvement in the probe transmission; Ultrafast switching from one channel to the other.


Related Articles

  • Intracavity gain and absorption dynamics of hybrid modelocked semiconductor lasers using.... Gee, S.; Coffie, R. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2569 

    Measures the intracavity gain and absorption dynamics of hybrid modelocked semiconductor lasers using multiple quantum well saturable absorbers. Role of the lasers in the pulse shaping and chirping dynamics; Effect of nonlinear dynamics on the chirping properties of optical pulses; Analysis of...

  • Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells. Rosencher, E.; Bois, P.; Nagle, J.; Costard, E.; Delaitre, S. // Applied Physics Letters;10/16/1989, Vol. 55 Issue 16, p1597 

    We report the first experimental evidence of a nonlinear optical effect due to intersubband transitions in compositionally asymmetrical multiquantum wells. The effect is detected as an optical rectification signal appearing at the structure terminals when irradiated by a continuous 10.6 μm...

  • Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers. Suchalkin, S.; Shterengas, L.; Kisin, M.; Luryi, S.; Belenky, G.; Kaspi, R.; Ongstad, A.; Kim, J. G.; Martinelli, R. U. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p041102 

    The sources of temperature sensitivity of the threshold current in type-I and type-II mid-infrared semiconductor lasers are investigated. Measurements of the interband optical absorption allow direct comparison of the optical matrix elements in laser structures with type-I and type-II band...

  • GaInAs/AlGaAsSb quantum-cascade lasers. Yang, Q.; Manz, C.; Bronner, W.; Kirste, L.; Köhler, K.; Wagner, J. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131109 

    Quaternary-barrier-containing GaInAs/AlGaAsSb quantum-cascade lasers, motivated by reducing the barrier height compared to that in GaInAs/AlAsSb quantum-cascade lasers, have been demonstrated. The design of these quaternary-barrier-containing lasers is based on triple-quantum-well...

  • Large-signal coherent control of normal modes in quantum-well semiconductor microcavity. Lee, Y.-S.; Norris, T. B.; Maslov, A.; Citrin, D. S.; Prineas, J.; Khitrova, G.; Gibbs, H. M. // Applied Physics Letters;6/18/2001, Vol. 78 Issue 25, p3941 

    We demonstrate coherent control of the cavity-polariton modes of a quantum-well semiconductor microcavity in a two-color scheme. The cavity enhancement of the excitonic nonlinearity gives rise to a large signal; modulating the relative phase of the excitation pulses between zero and π...

  • Optically and Electrically Pumped of GaInN As/GaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs) for 1.3 μm Wavelength Operation. Chaqmaqchee, Faten // Arabian Journal for Science & Engineering (Springer Science & Bu;Jul2014, Vol. 39 Issue 7, p5785 

    The 1.27 μm pulsed operation of an electrically and an optically pumped simple bar GaInNAs vertical-cavity surface-emitting laser (VCSEL) is reported. VCSELs are becoming an increasingly important optical source technology for long haul fibre communication systems, and are essentially working...

  • Room-temperature “W” diode lasers emitting at λ≈4.0 μm. Bewley, W. W.; Vurgaftman, I.; Kim, C. S.; Kim, M.; Canedy, C. L.; Meyer, J. R.; Bruno, J. D.; Towner, F. J. // Applied Physics Letters;12/6/2004, Vol. 85 Issue 23, p5544 

    Type-II “W” diode lasers with ten quantum-well periods operated in pulsed mode to 315 K, where the emission wavelength was 4.02 μm. The devices with uncoated facets had a threshold current density of 145 A/cm2 and slope efficiency of 47 mW/A per facet at 78 K, and displayed a...

  • Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics. Chacinski, Marek; Schatz, Richard; Kjebon, Olle; Hammar, Mattias; von Würtemberg, Rickard Marcks; Mogg, Sebastian; Sundgren, Petrus; Berggren, Jesper // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211109 

    The dynamic performance of InGaAs/GaAs 1.27 μm single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity...

  • Performance comparison of optically pumped type-II midinfrared lasers. Ongstad, A. P.; Kaspi, R.; Tilton, M. L.; Chavez, J. R.; Dente, G. C. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043108 

    We report a comparative study on the performance of three optically pumped, type-II quantum well lasers with differing quantum well (QW) confinement. One of the active regions emphasized hole confinement, another emphasized electron confinement, while the third incorporated both electron and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics