Characterization of arsenic doping profile across the polycrystalline Si/Si interface in

Macaulay, J.M.; Hull, R.; Jalali, B.; Magee, C.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1258
Academic Journal
Characterizes arsenic (As) doping profile across the polycrystalline Si/Si interface in polycrystalline silicon emitter bipolar transistors. Effect on the combination of Z-contrast scanning transmission; Coincidence of polycrystalline Si/Si crystallographic interface with the measurement of As doping; Account of the As dopant level.


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