Low temperature (313 degrees C) silicon epitaxial growth by plasma-enhanced chemical vapor

Ming-Deng Shieh; Chiapyng Lee; Cheng-Hsein Chen; Tri-Rung Yew; Chung-Yuan Kung
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1252
Academic Journal
Examines the low temperature silicon epitaxial growth on p-type, silicon wafers by plasma enhanced chemical vapor sediment with stainless steel mesh. Effect of modified ex situ spin-etch cleaning and in situ hydrogen baking step on epitaxial growth; Relation between epitaxial film and silane flow; Diffraction patter of films.


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