Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy

Lu, F.; Perry, C.H.; Namavar, F.; Rowell, N.L.; Soref, R.A.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1243
Academic Journal
Presents a strain study of silicon-germanium epilayers on silicon substrates using Raman spectroscopy. Materials used as a quantitative measure of the strain; Comparison of the thickness between layer growth and silicon substrates in the region of 100 nanometer; Epilayer and interface quality based on the phonon linewidths.


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