Aluminum layers as nonalloyed contacts to p-type GaAs

Ragay, F.W.; Leys, M.R.; Wolter, J.H.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1234
Academic Journal
Examines the electrical characteristics of aluminum layers as nonalloyed contacts to p-type GaAs. Process of depositing the aluminum layer after growth by molecular beam epitaxy (MBE); Characterization of structures through transmission line model; Significance of planar tunneling contacts in an MBE process.


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