Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

Look, D.C.; He, Y.; Ramdani, J.; El-Masry, N.; Bedair, S.M.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1231
Academic Journal
Examines the semi-insulating nature of gas molecular beam epitaxial InGaP grown at very low temperatures. Association of the material grown at 200 degree Celsius; Increase of resistivity annealed at 600 degree Celsius; Reasons for the lack of need for an anneal to be semi-insulating for the material.


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