Low temperature silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition

Sanganeria, Mahesh K.; Violette, Katherine E.; Ozturk, Mehmet C.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1225
Academic Journal
Examines the quality of epitaxial silicon films deposited by a combination of ultrahigh vacuum with rapid thermal chemical vapor deposition. Achievement of epitaxial growth on hydrogen passivated silicon surfaces; Effect of growth temperature on the generation lifetime of the films; Doping of the films with boron.


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