TITLE

In situ optical investigation of the etching process in the silicon HCl system

AUTHOR(S)
Ohshita, Y.; Hosoi, N.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1216
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines surface reactions in silicon (100) etching with hydrogen chloride gas using surface photoabsorption and quadrupole mass spectrometer. Effect on the adsorption of chloride atoms on the silicon surface; Determination of the time constants and activation energy; Etching products at different activation energy.
ACCESSION #
4294125

 

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