In situ optical investigation of the etching process in the silicon HCl system

Ohshita, Y.; Hosoi, N.
August 1993
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1216
Academic Journal
Examines surface reactions in silicon (100) etching with hydrogen chloride gas using surface photoabsorption and quadrupole mass spectrometer. Effect on the adsorption of chloride atoms on the silicon surface; Determination of the time constants and activation energy; Etching products at different activation energy.


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