TITLE

High electron mobility transistor based on a GaN-Al[sub x]Ga[sub 1 - x]N heterojunction

AUTHOR(S)
Khan, M. Asif; Bhattarai, A.; Kuznia, J.N.; Olson, D.T.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/30/1993, Vol. 63 Issue 9, p1214
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication and direct current characterization of a high electron mobility transistor (HEMT) based on GaN-Al[sub x]Ga[sub 1-x]N heterojunction. Dominance of two dimensional electron gas at the interface; Fabrication of HEMT in ion implant mesas using titanium or gold; Complete pinchoff for a -6 volts gate bias.
ACCESSION #
4294124

 

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