TITLE

Defect and strain redistribution in In[sub x]Ga[sub 1-x]As/GaAs multiple quantum wells studied

AUTHOR(S)
Wagner, J.; Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1842
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines defect and strain redistribution in In[sub x]Ga[sub 1-x]As/gallium arsenide multiple quantum wells. Use of resonant Raman scattering by longitudinal optical phonons; Sensitivity of scattering intensity; Detection of the onset of the strain redistribution.
ACCESSION #
4294099

 

Related Articles

  • Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells. LeBoeuf, S. F.; Aumer, M. E.; Bedair, S. M. // Applied Physics Letters;7/3/2000, Vol. 77 Issue 1 

    With the advent of high-quality AllnGaN quaternary cladding, InGaN quantum wells (QWs) have now been studied under both compressive and tensile strain, as well as no strain at all! This has allowed the experimental investigation of the two-dimensional electron gas (2DEG) properties within InGaN...

  • Quantum well width and In composition effects on the operating characteristics of InGaAa/GaAs.... Ben-Michael, R.; Fekete, D.; Sarfaty, R. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3219 

    Examines the effects of strain on the performance of highly strained gallium compounds quantum well lasers (SQWL). Theoretical advantages provided by SQWL; Behavior of the threshold current density versus the cavity length; Factors limiting indium concentration.

  • Effects of compressive and tensile uniaxial stress on the operation of AlGaAs/GaAs quantum-well.... Tiwari, Sandip; Bates, Richard S. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p413 

    Examines the effects of compressive and tensile uniaxial stress on the operation of aluminum gallium arsenide/gallium arsenide quantum-well lasers. Relationship between threshold current and relaxation oscillation frequency; Use of graded index separate confinement heterostructure single...

  • Theoretical calculation of optical gain in In[sub x]Ga[sub 1-x]As/InP quantum wells under.... Sugawara, Mitsuru // Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1842 

    Presents a theoretical calculation of optical gain in In[sub x]Ga[sub 1-x]As/InP quantum well lasers under biaxially compressive and tensile strain. Computation of valence band structure using Luttinger-Kohn Hamiltonian matrix; Effect of strains on lasing performance; Optical matrix element...

  • Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods. Benedetti, A.; Norris, D. J.; Hetherington, C. J. D.; Cullis, A. G.; Robbins, D. J.; Wallis, D. J. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p3893 

    SiGe/Si multiple quantum wells, nominally 4 nm thick, were grown by low pressure chemical vapor deposition and the Ge distribution within the wells was studied using a variety of transmission electron microscope-based techniques. Energy-dispersive x-ray spectroscopy and electron energy-loss...

  • Stress distributions and defect nucleation in buried heterostructure laser diodes. Bangert, U.; Harvey, A. J.; Howells, S.; Faux, D. A.; Dieker, C. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3392 

    Presents a study that determined stress distributions in the case of a single and of a multiple quantum well strained buried heterostructure laser. Details on observations of stacking fault nucleation at high stress points; Comparison of the location of high stresses with the nucleation sites...

  • High-resolution x-ray analysis of compressively strained 1.55 mum GaInAs/AlGaInAs.... Krost, A.; Bohrer, J. // Applied Physics Letters;11/27/1995, Vol. 67 Issue 22, p3325 

    Examines compressively strained InP/GaInAs/AlGaInAs multiquantum well (MQW) laser structures using high-resolution x-ray analysis. Analysis of crystallographic and optical properties of the structure; Use of dynamical diffraction theory in modeling rocking curves of the MQW structure;...

  • Using strained (Al[sub x]Ga[sub 1-x])[sub y]In[sub 1-y]As[sub z]P[sub 1-z] system materials to.... Sale, T.E.; Amamo, C.; Ohiso, Y.; Kurokawa, T. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1002 

    Computes the optical gain of various quantum wells for use in 850 nanometer lasers. Reduction of radiative current and sheet carrier density; Effect of compressive strain on vertical-cavity surface-emitting lasers and distributed feedback lasers; Dependence of the optimum well on the ultimate...

  • Optical gain control model of the quantum-well laser diode. Ahn, D.; Yoo, T.-K.; Mendez, E.; Chuang, S. L. // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5246 

    Examines the effects of various structure parameters such as grade potential, strain and quantum well size on the optical gain of single quantum-well lasers. Information on the technical applications of quantum-well lasers; Overview of previous studies on optimization model of quantum well...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics