Defect and strain redistribution in In[sub x]Ga[sub 1-x]As/GaAs multiple quantum wells studied

Wagner, J.; Larkins, E.C.; Herres, N.; Ralston, J.D.; Koidl, P.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1842
Academic Journal
Examines defect and strain redistribution in In[sub x]Ga[sub 1-x]As/gallium arsenide multiple quantum wells. Use of resonant Raman scattering by longitudinal optical phonons; Sensitivity of scattering intensity; Detection of the onset of the strain redistribution.


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