InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

Choa, F.S.; Tsang, W.T.; Logan, R.A.; Gnall, R.P.; Koch, T.L.; Burrus, C.A.; Wu, M.C.; Chen, Y.K.; Kapre, R.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1836
Academic Journal
Presents an indium gallium arsenide/indium gallium arsenide phosphide tunable detector grown by chemical beam epitaxy. Control on the thickness of the grating depth; Integration of a tunable active filter with a waveguide detector; Application of the full tuning range of the device.


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