TITLE

Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 mum waveguide modulators

AUTHOR(S)
Hou, H.Q.; Cheng, A.N.; Wieder, H.H.; Chang, W.S.C.; Tu, C.W.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electroabsorption property of indium arsenic phosphide/indium phosphide strained multiple quantum wells. Growth of the wells by molecular beam epitaxy; Existence of quantum-confined Stark effect; Change of the absorption coefficient.
ACCESSION #
4294096

 

Related Articles

  • Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns. Albert, S.; Bengoechea-Encabo, A.; Kong, X.; Sanchez-Garcia, M. A.; Calleja, E.; Trampert, A. // Applied Physics Letters;5/6/2013, Vol. 102 Issue 18, p181103 

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either...

  • Ultrafast 1.55-mum photoresponses in low-temperature-grown InGaAs/InAlAs quantum wells. Takahashi, R.; Kawamura, Y. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1790 

    Examines the ultrafast recovery time of saturable absorption in beryllium-doped indium gallium arsenide/indium aluminum arsenide multiple quantum wells (MQW). Growth of the films by gas-source molecular beam epitaxy at low temperature; Determination of carrier lifetime; Investigation on the...

  • Comparison of electroabsorption in asymmetric triangular and rectangular.... Gerber, D.S.; Droopad, R.; Maracas, G.N. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p525 

    Presents an experimental comparison of electroabsorption in equivalent rectangular and asymmetric triangular multiple quantum wells. Growth of samples by molecular beam epitaxy; Derivation of absorption spectra from reflectance measurements; Correlation between excitonic transition energy and...

  • Low-temperature AlGaAs/GaAs multiple quantum well structure and its application to.... Feng, W.; Yu, Y. // Applied Physics Letters;2/5/1996, Vol. 68 Issue 6, p812 

    Examines the low-temperature growth of aluminum gallium arsenide/gallium arsenide multiple quantum well structure by molecular beam epitaxy. Application of the structure to photorefractive devices; Determination of electroabsorption and electrorefraction values; Effect of annealing on the...

  • Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy. Zhang, D. H.; Zhang, D.H.; Zhang, W. M.; Zhang, W.M.; Osotchan, T.; Zhang, P. H.; Zhang, P.H.; Yoon, S. F.; Yoon, S.F.; Shi, X. // Applied Physics Letters;6/12/2000, Vol. 76 Issue 24 

    The intersubband absorption from the InGaAlAs/InAlAs multiple quantum-well structures, lattice matched to InP, for the long-wavelength infrared detection has been investigated. It is found that the strong absorption resulting from the bound-to-bound transition in the quaternary material is...

  • Two-dimensional electron gas effects in the electromodulation spectra of a pseudomorphic.... Yichun Yin; Qiang, H. // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1579 

    Examines the electron gas effects in the electromodulation spectra of a pseudomorphic Ga[sub 0.78]Al[sub 0.22]As/In[sub 0.21]Ga[sub 0.79]As/GaAs modulation-doped quantum well structure. Evaluation of the Fermi energy and electron gas concentration; Fabrication of the investigated structure by...

  • Independently contacted double quantum well structure fabricated by molecular beam epitaxial.... Patel, N.K.; Grimshaw, M.P. // Applied Physics Letters;2/13/1995, Vol. 66 Issue 7, p848 

    Examines independent contacts to two-dimensional electron gases in double quantum well structure. Application of molecular beam epitaxial regrowth over a patterned substrate; Optimization of growth conditions; Incorporation of a buffer layer at regrowth interfaces; Implications of the method...

  • Modulation-doped Cd[sub 1-x]Mn[sub x]Te/Cd[sub 1-y]Mg[sub y]Te quantum well structures with spatial in-plane profiling of the well width and the doping intensity. Wojtowicz, T.; Kutrowski, M.; Karczewski, G.; Kossut, J. // Applied Physics Letters;9/7/1998, Vol. 73 Issue 10 

    We report on the design and growth by molecular beam epitaxy of two types of graded Cd[sub 1-x]Mn[sub x]Te/Cd[sub 1-y]Mg[sub y]Te quantum well structures having a precisely controlled spatial profile of either the quantum well width and/or of the number of donors in one of the directions...

  • Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells. Guézo, M.; Loualiche, S.; Even, J.; Le Corre, A.; Dehaese, O.; Pellan, Y.; Marceaux, A. // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2355 

    GaInAs/InP multiple quantum wells (MQWs) are used as saturable absorbers for all-optical signal regeneration at a 1.55-μm wavelength. These MQWs are doped during their growth by molecular-beam epitaxy with Fe to improve their temporal response. The present work develops a theoretical...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics